NONDESTRUCTIVE FERROELECTRIC MEMORY AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To obtain a nondestructive ferroelectric memory suitable for high integration in which nondestructive read-out can be realized without causing any interference with nonselected memory cell at the time of reading or writing data by employing a feedback circuit added with a capacitor, a sense circuit, etc. SOLUTION: Information in a memory cell 1 is erased by a first pulse having voltage Ve higher than a coercive voltage Vc. Information is written in by a second pulse having voltage Vw, the absolute value thereof is lower than the voltage Ve of reverse polarity. A feedback circuit system added with a capacitor for reading out a smallΔC/C without requiring any voltage variation on the data line and a sense circuit combining comparative read-out with a reference dummy cell 11 comprising a ferroelectric are additionally provided.