发明名称 |
PREPARATION OF OXIDE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To increase the crystal growth rate and prepare a large-sized oxide crystal of good quality in relation to a method for preparing the crystal for an oxide superconductor of a Y-based or a lanthanoid-based element by keeping the atmosphere for growing the oxide crystal under a higher pressure than oxygen partial pressure in the atmospheric air. SOLUTION: The atmosphere for growing an oxide crystal having a structure of R1+x Ba2-x Cu3 O7-z [R is Y or a lanthanoid-based element; 0<=(x)<=1; 0<=(z)<=1] is regulated so as to provide >=0.8atm partial oxygen pressure. A crystal of Y123 (YBa2 Cu3 O7-x ) is prepared by using an apparatus in the figure. Y2 BaCuO5 is placed in the lower part of a crucible 6 made of a sintered compact of Y2 O3 . Barium carbonate is mixed with copper oxide so as to afford 3:5 molar ratio of Ba to Cu and the resultant mixture is then calcined to provide a substance, which is placed in the upper part of the crucible and used as a raw material for a melt 4. Supporting columns 7 made of an MgO single crystal are stood in a dish 8 made of Al2 O3 and Ag 9 is placed therein. The crucible 6 is then placed on the dish 8. Oxygen is introduced from an introduction port 14 is regulate the oxygen concentration at >=95%. The interior of an airtight chamber 13 is heated at >=1020 deg.C with a heater 11 to carry out the crystal growth while rotating the seed crystal 2.
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申请公布号 |
JPH09100193(A) |
申请公布日期 |
1997.04.15 |
申请号 |
JP19950260471 |
申请日期 |
1995.10.06 |
申请人 |
SUMITOMO ELECTRIC IND LTD;KOKUSAI CHODENDO SANGYO GIJUTSU KENKYU CENTER;ISHIKAWAJIMA HARIMA HEAVY IND CO LTD |
发明人 |
YAO SHIN;NAMIKAWA YASUO;EGAMI MASAHIRO;SHIOBARA TORU |
分类号 |
C01G1/00;C01G3/00;C30B15/00;C30B29/22;(IPC1-7):C30B15/00 |
主分类号 |
C01G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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