SEMICONDUCTOR DEVICE & METHOD FOR FORMING THE SAME

摘要

The present invention is to provide a method for fabricating semiconductor device. The method for fabricating according to the present invention comprises: a) forming a gate electrode(14) on a semiconductor substrate(10) using polysilicon gate electrode(14); b) forming a spacer(16) on side walls of the gate electrode(14); c) forming an insulating layer(20) after forming a diffusion layer(15) using the gate electrode(14) as a mask; d) forming a contact hole(21,23) on the gate electrode(14) and the diffusion layer(15); and e) forming a wiring layer(24,25) on the insulating layer(20), thereby interconnecting the wiring layer(24,25) with the gate electrode(14) and the diffusion layer(15). The present invention further comprises forming a second silicide(22) between contact portions of the wiring layer(24,25) and the first silicide(20). The first silicide(20) is formed on the wiring layer(24,25) and the gate layer(14) and the diffusion layer(15).