| 摘要 |
The solid state sensing pick-up device manufacturing method includes the steps of: forming a protective layer on photosensitive region of the image pick-up device on a silicon wafer; die-cutting the protective-layered image device, connecting pads of the cut device with leads of a leadframe, and packaging the chip with a molding die which has a salient contacting on the protective layer; removing the protective layer, and ceiling a transparent flat panel on the cavity formed by the molding die salient. |
