Semiconductor module with two metal connections on substrate

摘要

On the semiconductor substrate (1) are formed two metal connections (2a,b) covered by a deposited silicon oxide film (4), filling the space between the connections. The chemical formula of the silicon oxide film contains an Si-F compound. Pref. the chemical formula of the silicon oxide comprises a unit with two silicon atoms bound together by an oxygen atom. The first silicon atom also binds three oxygen atoms, while the second silicon atom binds one to three fluor atoms.