发明名称 |
Nonvolatile semiconductor memory |
摘要 |
A nonvolatile semiconductor memory according to the present invention includes a plurality of floating gate type memory cells arranged in rows and columns, a plurality of word lines, each word line being connected to the memory cells arranged in a given one of the rows, and a plurality of bit lines arranged in parallel to one another. Each bit line is connected to the memory cells arranged in a given one of the columns and the bit lines are divided into first bit lines and second bit lines which are arranged to alternate with one another. A page buffer is also included which has a first page buffer portion connected to the first bit lines extending in a first column direction and a second page buffer portion connected to the second bit lines extending in a second column direction, the first column direction being opposite to the second column direction. This construction allows for high integration density and reduced data loading cycle time.
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申请公布号 |
US5625590(A) |
申请公布日期 |
1997.04.29 |
申请号 |
US19950574970 |
申请日期 |
1995.12.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, BEYNG-SUN;LIM, YOUNG-HO |
分类号 |
G11C17/00;G11C5/02;G11C7/18;G11C16/02;G11C16/06;G11C16/10;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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