COULOMB BLOCKAGE ELEMENT AND ITS FABRICATION

摘要

PROBLEM TO BE SOLVED: To embody an element appearing a coulomb blockage phenomenon at high temperatures. SOLUTION: An oxide film 5 is pattern-processed and then a silicon layer 4 is etched with use of the oxide film 5 as a processed mask. The silicon lyer 4 is processed into such a shape as to have a thin line part 10 and first and second electrode parts 11 and 12 wider than the thin line part 10. After this structure is annealed, the silicon layer of 4 of the electrode parts 11 and 12 becomes thinner than the thin line part 10 in the vicinity of the thin line part 10. Thereby a otential barrier higher in energy than the thin line part is formed in both ends of the thin line part to confine electric charges within the thin line part 10, thus realizing a coulomb blockage element operating at high temperatures.