| 摘要 |
PROBLEM TO BE SOLVED: To facilitate easy fabrication of a high-density quantum device by forming quantum thin lines or quantum dots at a resolution twice as high as a limit resolution of lithography. SOLUTION: Resist 12 is softened and modified into a mask and an Si substrate 11 is subjected to an isotropic etching process with use of the resist mask. The resist 12 is halfway ashed to form a spontaneous oxide film only on exposed areas of the Si substrate. The Si substrate 11 is subjected to the isotropic etching process with use of the spontaneous oxide film as a mask. Thereby two quantum thin lines having a triangular section can be formed within one pitch of the resist 12. Further, these processes can be carried out in two directions to form quantum dots. |
