| 摘要 |
A method of fabricating a high-speed optical switch according to ion implantation includes the steps of sequentially growing an n- InGaAsP optical waveguide layer 2 and n- InP layer 3' on an n+ InP substrate 1 using epitaxy, depositing SiNx 7' on the substrate, etching a portion of the SiNx layer, corresponding to the intersection of waveguide, ion-implanting an n-type dopant 8 into the n- InGaAsP optical waveguide layer 2 and carrying out heat treatment, to activate the implanted dopant, removing the SiNx layer 7' and n- InP layer 3' ion-implanted, sequentially growing an n- InP clad layer 3, p- InP layer 4, n- InGaAs layer 5 and current blocking layer of p- InGaAs layer 6, selectively etching the n- InGaAs layer 5 in the form of groove, diffusing Zn into the overall surface of the substrate and etching a predetermined portion of the aforementioned layers formed on the waveguide layer, other than the waveguide, depositing a SiNx insulating layer 7 on the overall surface of the substrate, forming a p-type electrode 10 through lift-off process and forming an n-type electrode 11.
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