| 摘要 |
A process for manufacturing a multi-level variable resistor capable of variably selecting a necessary resistance coefficient is disclosed. In the process, a resistor(6) of a predetermined pattern is formed on an insulating film(5) on a semiconductor chip. A fuse(7) is connectably formed at one end of the resistor(6). A conductive line(19) is connectably formed at one end of fuse(7). A process which forms an insulating layer(8) between layers in front of the resulting material is performed at least twice so that a plurality of resistors(6,9,12) to which a plurality of fuses(7,10,13) are connected are inserted into insulating layers(8,11,14) between layers to form a resistor.
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