发明名称 SEMICONDUCTOR STORAGE
摘要 PROBLEM TO BE SOLVED: To reduce power consumption by stopping writing and reading operations due to an internal address signal for a memory cell which cannot be selected by an address signal inputted externally. SOLUTION: A memory cell within a memory cell array 1 is successively selected based on an address signal X inputted externally, thus writing and reading cell information. The storage cell in the memory cell array 1 is selected and written and read based on an address signal Xa generated by an internal address generation circuit 14, thus writing and reading cell information. An output signalϕOFF for fixing the signal of a specific bit of the internal address signal Xa is outputted from a non-active signal generation circuit 17 to prevent a storage cell which is not selected by the external address signal X from being selected.
申请公布号 JPH09147552(A) 申请公布日期 1997.06.06
申请号 JP19950302875 申请日期 1995.11.21
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 KATO KOJI
分类号 G11C11/403;G11C11/406;(IPC1-7):G11C11/403 主分类号 G11C11/403
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