发明名称 |
High voltage tolerant CMOS input/output pad circuits |
摘要 |
A high voltage tolerant CMOS output driver circuit and high voltage tolerant CMOS input receiver circuit, through the use of shield transistors and the redefinition of the substrate of the PFET devices, is provided. The invention may be incorporated for protection in integrated circuits operating with a lower power supply voltage than externally interfaced devices operating with a higher power supply voltage.
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申请公布号 |
US5646809(A) |
申请公布日期 |
1997.07.08 |
申请号 |
US19950520218 |
申请日期 |
1995.08.28 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
MOTLEY, GORDON W.;MEIER, PETER J.;MAITLAND, DAVID S. |
分类号 |
H01L21/8238;H01L27/092;H03K19/00;H03K19/003;H03K19/0175;H03K19/0948;(IPC1-7):H02H9/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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