| 摘要 |
PROBLEM TO BE SOLVED: To form a thermally stable TiAs layer on the interface of a gate electrode and a GaAs substrate in the manufacture of a GaAs FET. SOLUTION: A Schottky electrode is characteristically formed as follows. A Ti layer is formed on a GaAS surface 1, a TiAs compound 22 is formed by conducting heat treatment in an As atmosphere, and an Al layer 3 is deposited on the TiAs compound 22. Also, As is injected into the expected region for formation of a Schottky electrode on the surface of GaSa, and after a Ti layer 21 and an Al layer 23 have been laminated on the expected region for formation of a Schottky electrode, a TiAs compound 22 is formed by conducting heat treatment. Besides, a Schottky electrode is formed on GaSa-IC using either of the above-mentioned forming methods. |
