发明名称 AMORPHOUS CARBON FILM, MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To manufacture a layer insulating material with a low relative permittivity and less moisture in film, excellent in heat resistance, by adding benzene rings to an amorphous carbon film containing fluorine. SOLUTION: A workpiece 106 is placed on an electrode 107, and then aromatic hydrocarbon gas, such as benzene, toluene, and xylene, is fed from a gas cylinder 103 into the equipment. A high frequency or direct-current power is applied between electrodes at a degree of vacuum of 0.01 to 0.5Torr, and discharge is thereby caused to produce hydrocarbon plasma. An amorphous carbon film is formed by using this hydrocarbon plasma. In addition to the aromatic hydrocarbon gas, fluoric gas, such as CF4 , CF6 , C2 F4 , NF3 and C2 F6 , is also fed, and is excited by means of the plasma to be contained in the amorphous carbon film. This obtains an insulating film with heat resistance improved to 450 deg.C or so, a relative permittivity of 3 or below, and a very small quantity of moisture in the film.
申请公布号 JPH09246263(A) 申请公布日期 1997.09.19
申请号 JP19960049764 申请日期 1996.03.07
申请人 NEC CORP 发明人 ENDO KAZUHIKO;TATSUMI TORU
分类号 C23C16/26;H01L21/312;H01L21/314;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/312 主分类号 C23C16/26
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