| 发明名称 |
Process of making semiconductor-on-insulator substrate |
| 摘要 |
A process for forming a semiconductor substrate wherein an epitaxial layer is formed on a porous layer of a first substrate, an insulating layer is formed on the epitaxial layer, the insulating layer is bonded to a second substrate and the porous layer is selectively removed.
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| 申请公布号 |
US5670411(A) |
申请公布日期 |
1997.09.23 |
| 申请号 |
US19950444015 |
申请日期 |
1995.05.18 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;YAMAGATA, KENJI |
| 分类号 |
H01L21/02;H01L21/304;H01L21/306;H01L21/762;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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