PRODUCTION OF SOI STRUCTURE

摘要

PROBLEM TO BE SOLVED: To improve the crystallinity and flatness of a silicon crystal film by making a metallic element film stick onto an oxide substrate having insulating properties and then growing the silicon crystal film. SOLUTION: A metallic element film, comprising at least one metallic element selected from that constituting an oxide substrate having insulating properties and having <=30Åthickness is formed on the oxide substrate and a silicon crystal film is then epitaxially grown thereon to afford a silicon on insulator (SOI) structure.