发明名称 METHOD FOR EXPOSURE
摘要 <p>PROBLEM TO BE SOLVED: To achieve high precision alignment also for a shot region lacking a wafer mark when the alignment is carried out according to a die-by-die mode. SOLUTION: Positions of wafer marks of a plurality of sample shots selected from each shot region are detected by an FIA(field image alignment) mode alignment sensor according to an EGA mode, then scaling and arrangement coordinates for each shot region are obtained from this detected result (step 103), and the projection magnification of a projection optical system is adjusted based on the result of that scaling (step 104). Each shot region is moved to an exposure position based on those coordinates, and signals from the wafer marks are detected by a TTR(through the reticule) mode alignment sensor (step 105). In the case where the signal strength of the detected signal is not larger than a predetermined value, alignment is performed based on the EGA mode arrangement coordinates and exposure is carried out (step 108). In other shot regions, the alignment is carried out according to a die-by-die mode (step 107).</p>
申请公布号 JPH09306811(A) 申请公布日期 1997.11.28
申请号 JP19960120299 申请日期 1996.05.15
申请人 NIKON CORP 发明人 NEI MASAHIRO
分类号 G03F7/20;G03F9/00;H01L21/027;H01L21/68;(IPC1-7):H01L21/027 主分类号 G03F7/20
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