| 摘要 |
<p>The present invention relates a process for making a capacitor of a semiconductor element. As a semiconductor element is highly integrated, more capacitance is required. Therefore, according to the present invention, a storing electrode including an increased area mask having a size control of a mask prior to storing, a selective growing technique, and an etch selective rate during wet drying are qequentially formed. A dielectric film and a plate electrode are formed on the storing electrode. The capacitor according to the present invention has an enough capacitance and achieves a high integration of a semiconductor element. The present invention relates a process for making a capacitor of a semiconductor element. As a semiconductor element is highly integrated, more capacitance is required. Therefore, according to the present invention, a storing electrode including an increased area mask having a size control of a mask prior to storing, a selective growing technique, and an etch selective rate during wet drying are qequentially formed. A dielectric film and a plate electrode are formed on the storing electrode. The capacitor according to the present invention has an enough capacitance and achieves a high integration of a semiconductor element.</p> |
