| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the temp. dependence of the resistivity of an insulation film to make an electrostatic chuck electrode usable in a wide temp. range, by adding Si to Al2 O3 to form the insulation film in the electrodes for holding a wafer by an electrostatic attraction force caused between the electrode and the insulation film. SOLUTION: Si is added to Al2 O3 to form an insulation film 14 of an electrostatic chuck electrode which holds a wafer by an electrostatic attraction force caused between the electrode and the film 14. The film 14 thus formed has an almost invarible resistivity. Adding of Si reduces the activation energy of electric conduction of Al2 O3 . The resistivity is adjustable for a desired value by controlling the added amt. of Si to Al2 O3 . From view of the leak current and the residual attraction force, a range of 10<9> to 10<10> ohms.cm is optimum. This expands the applicable electrode temp. range.</p> |
