| 摘要 |
<p>PROBLEM TO BE SOLVED: To measure the stress of a specified minute area with high resolution by comparing the energy measured value corresponding to the forbidden band width of the part to be measured of a semiconductor with that natural to the semiconductor to measure the shift tendency and shift quantity. SOLUTION: A laser beam having a photon energy larger than the forbidden band width natural to semiconductor which is emitted from a laser beam source 3 is reflected and converged by a converging mirror 6 to irradiate a sample 1. The electron excited within a semiconductor base by the emitted light emits a light when it is returned to the base state. The emitted light is incident on a spectroscope 9, and the spectrum is detected by a light detector 10 and displayed 12. In the spectrum, the line revealed on the shortest wavelength side is equal to the energy of the semiconductor forbidden band width, and the forbidden band width obtained in the state having no stress becomes the value corresponding to the forbidden band width natural to semiconductor. This stored value is compared with the sample measured value, whereby compression or extension can be judged from which side of long and short wavelength sides it is shifted on, and the stress can be measured from the shift quantity with high resolution.</p> |
