发明名称 MANUFACTURING OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacture method which prevents foreign substances from being generated on a wafer. SOLUTION: The semiconductor device manufacturing method comprises mounting wafers W in stages of wafer mounts 2 in a single wafer type low- pressure CVD apparatus having a heat treating chamber 1, and forming films on the wafers being heated. The mounts 2 are stacked one above the other in the treating chamber 1. When the wafers W are inserted in the treating chamber 1, previously heated up to desired treating temp., the wafers are not immediately mounted on the stages of the mounts, except the lowermost mount, but left in this chamber until the wafer center temp. rises near the internal temp. in the treating chamber 1. Then they are mounted on specified stages of the mounts to form films.</p>
申请公布号 JPH1050684(A) 申请公布日期 1998.02.20
申请号 JP19960201403 申请日期 1996.07.31
申请人 SONY CORP;KOKUSAI ELECTRIC CO LTD 发明人 FUJITA SHIGERU;FURUNO MAKOTO;ITAYA HIDEJI
分类号 C23C16/44;C23C16/458;C23C16/46;H01L21/205;H01L21/31;H01L21/683;(IPC1-7):H01L21/31;H01L21/68 主分类号 C23C16/44
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