| 摘要 |
<p>PROBLEM TO BE SOLVED: To satisfy both fine patterning of an MIM element and uniform dielectric breakdown and element characteristics simultaneously by forming an upper electrode on a thin insulation film, formed on the boundary at the inclining side face part of a lower electrode and forming a thick insulation film at the upper flat part and the tapered side face part of the lower electrode excluding the boundary. SOLUTION: A signal wiring, an MIM element 4 and a pixel electrode 5 are formed on a glass substrate 1 on the element side. The MIM element 4 comprises a relatively thin insulation film 7a, formed on the boundary of a tapered side face part at the upper flat part of a lower electrode 3a, a relatively thick insulating film 7b formed at the upper flat except the boundary, and an upper electrode 8 formed over the relatively thin insulating film 7a and the relatively thick insulating film 7b. In the MIM element 4, tantalum is employed in lower electrode 3a, titanium oxide is employed in the insulation film 7, chromium, titanium or aluminum is employed in the upper electrode 8, and a transparent conductive film, e.g. ITO, is employed in the pixel electrode 5.</p> |
