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发明名称
Mehrschichtverbindung für integrierte Schaltungsstruktur mit zwei oder mehreren metallischen Leiterschichten und Verfahren zum Herstellen derselben
摘要
申请公布号
DE3856021(T2)
申请公布日期
1998.04.16
申请号
DE19883856021T
申请日期
1988.01.14
申请人
ADVANCED MICRO DEVICES, INC., SUNNYVALE, CALIF., US
发明人
SHANKAR, KRISHNA, 2 MT VIEW CALIFORNIA 94043, US;RAMANI, RAM, SAN JOSE CALIFORNIA 95136, US
分类号
H01L21/60;H01L21/28;H01L21/768;H01L23/522;H01L23/532;H01L29/43;(IPC1-7):H01L23/482
主分类号
H01L21/60
代理机构
代理人
主权项
地址
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