| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent short-circuitting from being generated between a gate line and a source line by crosswise arranging the gate line and the source line in an area outside a transistor and arranging a laminated body composed of an insulating layer and a semiconductor layer between them. SOLUTION: This substrate has a gate electrode at one part of gate lines 1a and 1a' to be the gate terminal of the transistor, insulating layer I in contact with the gate electrode, high-resistance semiconductor layer SC in contact with the insulating layer I closer to the resistor of the insulating layer, source electrode at one part of source lines 3 and 3' to be a source terminal arranged in contact with one terminal of the semiconductor layer SC, and drain electrodes 4-4"' to be drain terminals arranged in contact with the other terminal. On such a transistor substrate, the gate lines 1a and 1a' from the gate electrode and the source lines 3 and 3' from the source electrode are respectively extended, the source lines 3 and 3' are arranged crosswise with the gate lines 1a and 1a' and between both the lines at that crossing part, an extended insulating layer I' and an extended semiconductor layer SC' extended from the insulating layer and the semiconductor layer are arranged.</p> |
