发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME
摘要 <p>A process for fabricating a multiplicity of semiconductor devices comprises the steps of applying electrodes (14', 16') to both faces of a semiconductor wafer, and mounting the semiconductor wafer to a substrate (18) by means of an intervening layer of wax (20) which bonds to the substrate and to the wafer. The wafer is then divided by grooves which extend through the wafer and at least partially through the layer of wax. The grooves are filled with a flexible resin (28) that bonds to and passivates the edges of the chips, and the resin is subsequently cured. Next, the wax is removed from the cured resin and chips to provide a discrete flexible unit separate from the substrate. The discrete unit is divided into cells, each of which includes one of the chips for subsequent fabrication into a completed semiconductor device.</p>
申请公布号 KR0135609(B1) 申请公布日期 1998.04.25
申请号 KR19880016078 申请日期 1988.12.02
申请人 GENERAL INSTRUMENT CORPORATION 发明人 SHYR, RICHARD
分类号 H01L21/301;F02D41/14;H01L21/304;H01L21/78;H01L23/29;H01L23/31;H01L29/06;(IPC1-7):H01L21/78 主分类号 H01L21/301
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