FABRICATION METHOD OF ENHANCEMENT MODE-DEFLECTION MODE FIELD EFFECT TRANSISTOR,申请号KR19940020945-传众专利搜索

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发明名称	FABRICATION METHOD OF ENHANCEMENT MODE-DEFLECTION MODE FIELD EFFECT TRANSISTOR
摘要
申请公布号	KR0135146(B1)	申请公布日期	1998.04.25
申请号	KR19940020945	申请日期	1994.08.24
申请人	LG ELECTRONICS CO.,LTD	发明人	LEE, JAE-HAK
分类号	H01L21/335;(IPC1-7):H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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