METHOD OF ADJUSTMENT OF VALUE OF CHARGE OF REVERSE RECOVERY OF SEMICONDUCTOR DEVICES WITH PRESET ACCURACY

摘要

FIELD: semiconductor technology, manufacture of thyristors and diodes. SUBSTANCE: method includes adjustment of value of charge Qrr of reverse recovery determined by relation , where Qº is required value of Qrr for semiconductor devices, Qfi is factual measured value of Qrr of i-th semiconductor device, ΔQ is value of permissible deviation of Qfi from Qº by way of irradiation of lot of rectifying elements across which values Qrr(Qoi) are measured in advance. For given type of semiconductor devices and irradiation modes there is established dependence F of change of Qrr as function from irradiation dose (ö) by flux of fast electrons at which irradiation doze (Q1i) for i-th rectifying element is set proceeding from dependence F in correspondence with difference between Qoi and Qº. Qrr/(Qoi) is measured in each i-th rectifying element not satisfying relation 1 after irradiation and its own dependence Fi of change of Qrr from ö is established. After this repeat irradiation is conducted which dose ö2i for i-th rectifying element is set proceeding from Fi corresponding to difference between Q1i and Qº. EFFECT: manufacture of semiconductor devices with preset accuracy. 2 tbl