| 摘要 |
In conjunction with the standard step and repeat process, photocleaving of certain features is achieved by adding to the photoresist mask a photocleaving structure located on the opposite side from the features. The photocleaving structure consists of an opaque area and an attenuating area, separated by a straight line boundary. The attenuating area reduces the amount of actinic radiation that can passes through it by one of several possible elements including alternating opaque and transparent areas that are too small and too closely spaced to be resolved by the radiation. Using an unmodified step and repeat procedure, the latent image of the features that are to be photocleaved is first formed in the usual way (exposure through the mask). When the mask is positioned for the next exposure, the afore-mentioned boundary in the photocleaving structure is arranged to exactly bisect the features so that, after the second exposure, the features will have been photocleaved.
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