| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method in which a crystal defect caused by interstitial oxygen and impurity oxygen contained in a semiconductor crystal surface layer part is simply evaluated with high sensitivity, and an evaluated sample can be recovered, relating to a total reflection attenuation spectral method. SOLUTION: A pretreatment for removal of a surface film such as an oxide film, etc., formed on the surface of a semiconductor crystal is performed, and then evaluation is performed in a total reflection attenuation spectral method. A difference spectrum (c) between evaluation spectrums (a) and (b) of a semiconductor crystal containing interstitial oxygen and a crystal defect and that containing little interstitial oxygen and crystal defect, respectively, is analyzed, thereby the interstitial oxygen and the crystal defect contained in the semiconductor crystal are evaluated. After etching and polishing of an arbitrary thickness in a depth direction from the surface of the semiconductor crystal are performed, a preprocessing wherein a surface film such as an oxide film, etc., formed on the surface of the semiconductor crystal is removed is performed for evaluation. After the semiconductor and IRE(internal reflection element) are set at a constant temperature in the range of 4.2-300K, evaluation is performed. |
