| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize high speed write operation. SOLUTION: When data writing is conducted in unit of page by gradually raising the application condition of a write pulse, data writing is conducted by setting the highest speed writing condition measured in each page at the time of testing. A cell 111 for setting the writing condition arranged in the memory array 11 is controlled to inhibit the erasing during the ordinary operation and check by the wired OR is conducted by the inverse logic for that in the node for checking by wired OR of the check circuit, the writing condition is set to the cell 111 for setting the writing condition at the time of wafer testing or assembled product testing, the writing condition is read at the time of ordinary reading operation (during this period, the write data is read for the external circuit), and a voltage control circuit comprising this value and a counter circuit to generate the write operation time are set to the initial value to start the write operation.</p> |
