| 摘要 |
PROBLEM TO BE SOLVED: To protect static electricity without adding other circuits for reducing trigger voltage of a thyristor and damaging a gate insulating film, by connecting a gate electrode of a bipolar transistor with an impurity region of a second conductivity type. SOLUTION: This electrostatic breakdown preventing equipment is constituted of a semiconductor substrate 31 of a first conductivity type, a fourth and a fifth impurity regions 38, 38a of a second conductivity type which are formed on a specified region in the substrate 31 via an element isolation film 37, a third metal layer 43 which is formed on the upper side of the element isolating film 37 and electrically connected with a pad 45, a VSS line continuously connected with the fifth impurity region 38a of a second conductivity type via a contact hole, and a second metal layer 41 which electrically and continuously connects the fourth impurity region 38 of a second conductivity type with a gate line 42. Since the gate electrode 42 of a bipolar transistor is connected with an N<+> layer 38 of a field transistor, the bipolar transistor can be operated with a low voltage. |
