发明名称 SUBSTRATE-TREATING APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To avoid leaks at a gate passage for improving the maintainability by providing a movable cover coupled with a drive in a reaction chamber, so as to cover an opening of the gate passage at the reaction chamber, thereby preventing the deposition of reaction products on the gate. SOLUTION: A treating apparatus 91 treats a semiconductor wafer 30 in a reaction chamber 1, having an opening of a gate passage 43 and a cover 50 inside for covering the gate passage opening which prevents deposition of reaction products on the gate passage 43. The cover 50 has a shield plate 51 and a pedestal 52 mounting the shield plate 51, which is conveniently made of a stainless metal, e.g. SUS316. The pedestal 52 is not always necessary to be continuous over the entire periphery but may be provided for enabling a drive 35 to drive the cover 50.
申请公布号 JPH10199957(A) 申请公布日期 1998.07.31
申请号 JP19970000260 申请日期 1997.01.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HARAGUCHI HIDEO
分类号 H01L21/677;H01L21/203;H01L21/205;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/677
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