Laser plasma X-ray source, and semiconductor lithography apparatus and method using the same

摘要

A laser plasma X-ray source which has an improved X-ray conversion efficiency and minimized occurrence of debris is provided, and a semiconductor lithography apparatus using the same and a method therefor are provided. Its X-ray generation unit 100 is comprised of: vacuum chamber 5 which encases the target; target supply unit 110 which supplies a fine particle mixture gas target into vacuum chamber 5; laser irradiation unit 120 which irradiates laser beam 2 on the particle mixture gas target 10; and target recovery unit 130 which recovers unused particle mixture gas target from the vacuum chamber 5. <IMAGE>