| 摘要 |
PROBLEM TO BE SOLVED: To provide a provide a plasma processing system of high throughput. SOLUTION: This plasma processing system includes process chambers 10R, 10L which execute plasma processing of a substrate W, a load-lock chamber 11 which is arranged between these process chambers 10R and 10L and transporting means which are made freely movable back and forth in the adjacent directions where the process chamber 10R, the load-lock chamber 11 and the process chamber 10L are adjacently arranged and which are capable of transporting the substrate both between the load-lock chamber 11 and the process chamber 10r and between the load-lock chamber 11 and the process chamber 10L. An upper wing 20U and a lower wing 20L which are arranged apart from each other in a vertical direction are disposed as the transporting means. |
