A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms.
申请公布号
EP0573312(B1)
申请公布日期
1998.08.19
申请号
EP19930304402
申请日期
1993.06.07
申请人
DE BEERS INDUSTRIAL DIAMOND DIVISION (PROPRIETARY) LIMITED