| 摘要 |
PROBLEM TO BE SOLVED: To prevent stripping of an insulation film by providing a gap between a plated wiring and the insulation film and relaxing the internal stress of the plated wiring thereby protecting the insulation film against being pressed. SOLUTION: An active layer 11 and electrodes 12, 13 are formed on a semiconductor substrate 10 and followed by formation of a wiring metal 20, an insulation film 40, and the like. A plating lower layer resist is then formed and followed by formation of a plating power supply layer 30 on the plating lower layer resist and an opening. Subsequently, a plating upper layer resist is formed and partially removed in order to adjust the dimensions of the opening. Thereafter, plating 31 is grown selectively only at the part where the plating power supply layer 30 is exposed before removing the plating resist, the plating power supply layer 30, and the like. Furthermore, a gap 5 on the order of 0.5-2μm is provided between a plated wiring 32 and the insulation film 40 in order to prevent generation of stress pressing the insulation film 40 thus preventing the insulation film 40 from being floated or stripped. |
