ELEMENT ISOLATION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an element isolation method for a semiconductor device using selective epitaxial layer growth. SOLUTION: Over the entire surface of a semiconductor substrate 100 comprising a trench where an oxide film 104 is formed at its surface, an epitaxial layer is grown to evacuate the inside of the trench, after that, only such a region of the epitaxial layer where an element isolation region is formed is oxidized to complete an element isolation region 106A. With this, a leak current is reduced, thus an element of improved reliability is manufactured. In addition, no step takes place, and a process for removing a prolycrystalline silicon layer used for forming the element isolation region 106A is not required, thus process is simplified.