发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To unnecessitate a wiring and a power source supplying voltage preventing drain disturbance. SOLUTION: A block selection signal is outputted from block decoders 3a, 3b corresponding to blocks including selection word lines. Transistors Q0-Qm of blocks 1a, 1b including selection word lines out of a memory cell array 1 are turned on, and sub-bit lines SB0-SBm of a selection block are connected to main bit lines B0-Bm. Positive voltage is outputted at the time of read-out and write-in from an output corresponding to a selection word line out of output of a pre-decoder 2, and negative voltage is outputted at the time of erasing. Transistors Q11, Q12 corresponding to a selection block in a main decoder are conducted, positive voltage or negative voltage is outputted to a selection word line, and 0V is outputted to a non-selection word line.</p>
申请公布号 JPH10275487(A) 申请公布日期 1998.10.13
申请号 JP19970082843 申请日期 1997.04.01
申请人 NEC CORP 发明人 OBATA HIROYUKI
分类号 G11C16/02;G11C8/10;G11C16/06;G11C16/08;(IPC1-7):G11C16/02 主分类号 G11C16/02
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