发明名称 LASER TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To achieve an optimum laser treatment and to form, for example, a reliable semiconductor film without any scattering, by exciting a laser medium provided for a laser oscillator and a laser amplifier with asynchronous pulses, and forming a plurality of peaks by synthesizing the formed laser pulses. SOLUTION: A laser device consists of an oscillator 1 and at least one-stage amplifier 2 and is connected to a trigger pulse oscillation circuit 3 by cables 10 and 11. Each laser device has excitation devices 4 and 5 to excite a laser medium. A trigger pulse is applied only to the oscillator 1. Then, laser beams are generated, advance toward the amplifier 2, and are transmitted without being amplified. After a while, the laser beams being resonated in the oscillator 1 are attenuated. Then, by applying a trigger pulse only to the amplifier 2, weak laser beams remaining in the oscillator 1 are amplified by the amplifier 2 to generate two peaks. Two laser pulses essentially extend a pulse width.
申请公布号 JPH10275781(A) 申请公布日期 1998.10.13
申请号 JP19980105626 申请日期 1998.03.31
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 CHIYOU KOUYUU
分类号 H01L21/20;H01L21/265;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 H01L21/20
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