发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To form air gaps among wires of the same layer wiring without adding any PR process by simultaneously forming holes for air gaps and through holes and then grooves for wiring and holes for through holes. SOLUTION: After an insulating film is formed on lower-layer wiring 1, openings 3 for through holes and air gaps are formed. Then an insulating film is formed so that only the tops of the openings 3 for through holes and air gaps may be covered and cavities for through holes and air gaps are formed. After the cavities are formed, grooves 7 for wiring are formed by dry etching. Then through holes are formed by etching the cavities for through holes to the lower-layer wiring 1 by dry etching. When the through holes are formed, the cavities other than those for through holes become air gaps as they are. Then a metallic film of A Cu, etc., is formed on the entire surface. Therefore, air gaps can be formed without adding any PR process and, in addition, the inter-wiring capacity can be reduced.</p>
申请公布号 JPH10284597(A) 申请公布日期 1998.10.23
申请号 JP19970087105 申请日期 1997.04.07
申请人 NEC CORP 发明人 KYOHARA MASAKI
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/306 主分类号 H01L21/302
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