| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing dielectric breakdown of an insulation film and improving the reliability of the semiconductor device. SOLUTION: This PMOS(p-channel MOS) transistor comprises p-type silicon substrate 1, an element isolation oxide film 2 formed on a major surface of the p-type silicon substrate 1, an N well 3 formed on the major surface of the p-type silicon substrate 1, a gate oxide film 4 containing nitrogen and formed on the major surface of the p-type silicon substrate 1, a gate electrode 5 made of polycrystalline silicon film formed on the gate oxide film 4 which is doped into p-type and doped with nitrogen, side wall oxide films 6 formed on both side of the gate electrode 5 of the PMOS transistor, and a source and drain 7 doped into p-type and formed on both sides of the gate electrode 5 on the major surface of the p-type silicon substrate 1.
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