| 摘要 |
<p>PROBLEM TO BE SOLVED: To stably emit electrons via the application of the electrical field between an electron feed layer and a thin film electrode with a low voltage at high efficiency by providing a region containing an element having the work function lower than that of the metal thin film electrode on at least one of an insulating material layer formed on the electron feed layer made of a metal or a semiconductor and the metal thin film electrode formed on it. SOLUTION: An ohmic electrode 11, an electron feed layer 12 made of a metal or a semiconductor such as Si, an insulating material layer 13, and a metal thin film electrode 15 facing a vacuum space are formed in sequence on an element substrate 10. An element having the work function lower than that of the metal thin film electrode 15 is contained in an electron emitting layer on the surface or an intermediate layer 14 between the metal thin film electrode 15 and insulating material layer 13, or is dispersed in the metal thin film electrode 15 or insulating material layer 13. When a voltage is applied between the ohmic electrode 11 and metal thin film electrode 15 and the electrons from the electron feed layer 12 are moved in the insulating material layer 13 and are partially discharged into vacuum through tunnels of the intermediate layer 14 and metal thin film electrode 15, the electrons are smoothly moved by the intermediate layer 14.</p> |
