摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which obtains a semiconductor device of satisfactory characteristic, even at the time of improving the capacity of a cutting process, separating plural chips formed at a wafer and/or prevents the deterioration of yield due to the ink pollution of a fail mark. SOLUTION: After forming a passivation film 3 as the top layer of a wafer W, a film 3 on a bonding pad 2 and the film 3 on a scribe line 5 are removed by etching, through the use of a resist 4. In addition, this etching is continued to form a groove 6 at the substrate 1 of the scribe line 5. Then, after executing a wafer inspection, plural chips are individually separated by setting the depth of the groove 6 to be a prescribed one by using a blade R.</p> |