| 摘要 |
<p>A p-type silicon layer (3) which is a buried layer is formed in a p-type single crystal silicon substrate (2), and an n-type silicon layer (4) is formed on the upper surface of the substrate (2). A p-type silicon layer (5) for forming an opening is formed in the n-type silicon layer (4), and a metallic protective film (14) is formed on the upper surface of the silicon layer (4). The silicon substrate (2) has an electrode layer (18) formed on the back surface thereof via an oxide film (17). The electrode layer (18) and the silicon substrate (2) are electrically connected together in a portion corresponding to the p-type silicon layer (3) through an opening (17a) for connection. A positive terminal of a DC power source (V) is connected to the electrode layer (18), while a negative terminal is connected to a counter electrode (11), and a voltage is applied between the both (18, 11) to effect anodization.</p> |
