| 发明名称 |
SILICON DIOXIDE DEPOSITION BY PLASMA ACTIVATED EVAPORATION PROCESS |
| 摘要 |
A plasma activated reactive deposition process is used to deposit silicon oxide scratch resistant coatings on various substrates. The process comprises evaporating silicon or silicon oxide into an argon and nitrous oxide plasma which is directed to the surface to be coated.
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| 申请公布号 |
CA2241678(A1) |
申请公布日期 |
1998.12.26 |
| 申请号 |
CA19982241678 |
申请日期 |
1998.06.25 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
IACOVANGELO, CHARLES DOMINIC |
| 分类号 |
C23C14/06;C23C14/10;C23C14/32;C23C16/42;C23C16/50;H01L21/31;(IPC1-7):C23C14/30;B05D7/02;C08J7/04 |
主分类号 |
C23C14/06 |
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