| 摘要 |
FIELD: electronics, electroluminescent screens, displays, etc. SUBSTANCE: device uses a backing of silicon monocrystal, electronic injecting layer of porous silicon formed of surface part of the backing of monocrystal silicon, active electroluminescent layer and hole injecting layer made at least of the same material selected from the group, including polyaniline, aluminium, gold and mixed indium oxide and tin; the electronic injecting layer has operation of 2.5-4.0-eV output electrons and additionally may be doped by alkali or alkaline-earth metals, and the hole injecting layer is made as an optically transparent layer. The method of manufacture of electroluminescent device consists in formation of electronic injecting layer in the form of porous silicon by electrochemical etching of the backing of monocrystal silicon, application of active electroluminescent layer and hole injecting layer; the active electroluminescent layer is applied onto the surface of porous silicon by centrifuging or watering. Besides, the electronic ejecting layer is additionally doped by alkali or alkaline-earth metals before or after formation of porous silicon. Silicon doping is accomplished by electrolysis in an electrochemical cell with platinum anode in electrolyte contacting 0.1 to 0.5 mol/l of soluble salts of alkali or alkaline-earth metals in aproton solvent at cathode polarization of silicon at a current density of 2 to 4 mA/sq.cm during 5 to 10 min; then in the same electrolyte at anode polarization in potentostatic conditions at a voltage of 20 to 25V during 2 to 6 min the excess of the applied metal is removed from the silicon surface, and then thermal treatment is conducted during 10 to 30 min in vacuum at a residual pressure of gases not exceeding 10 mm Hg and temperature below the decomposition or melting point of the formed silicide of alkali or alkaline-earth metals by 1 to 250 C. Salt selected from the group including chloride, nitrate, lithium perchlorate is used as the salt alkali metals, and magnesium perchlorate
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