| 摘要 |
FIELD: magnetic-field measurement technology. SUBSTANCE: transistor has epitaxial layer of second polarity of conductivity formed on semiconductor plate of first polarity of conductivity and provided with two collector regions of second polarity of conductivity with base region of first polarity of conductivity and emitter region of second polarity of conductivity in-between, as well as contacts for mentioned regions. Collector regions are located in epitaxial layer at depth exceeding that of base region location; collector-region contacts are placed in cuts made in epitaxial layer and insulated on sides by near-wall dielectric; emitter and base regions have common boundary in vertical plane on side of collector contacts. Bottom of collector regions may be located in semiconductor plate. Size of each collector region, as viewed from top, can be determined by external size of near-wall dielectric of respective contact. EFFECT: improved magnetic sensitivity and selectivity of transistor with reduced initial zero drift, hence, improved precision of signal conversion. 3 cl, 2 dwg
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