| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory and a manufacture thereof which uniformly and surely forms elements. SOLUTION: On a substrate 10 a gate oxide film for forming word lines 106 not shown, floating gates 12, a gate insulation film 14, control gates 16, first insulation film 100 and second insulation film 102 are formed to isolate elements. The first insulation film 100 is an Si oxide film of 500Åor less, and second insulation film 102 is an Si nitride film of 2000Åthick or less. Both insulation films 100, 102 suppress the reflectivity of a light irradiated in the photolithographic process on the surface of the word lines 106 to below 40%, thereby uniformly forming a resist pattern 108.
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