IN-SITU DEPOSITION OF STOP LAYER AND DIELECTRIC LAYER DURING FORMATION OF LOCAL INTERCONNECTS

摘要

The method includes depositing a thin SiOxNy stop layer (22') on top of a semiconductor wafer within a chemical vapor deposition (CVD) reactor chamber having a low pressure, maintaining the low pressure following the deposition of the SiOxNy stop layer, and then depositing a thick TEOS oxide dielectric layer (26') on the SiOxNy stop layer (22') within the CVD reactor chamber.