| 摘要 |
A semiconductor component, in particular an NPN bipolar transistor, comprises an active surface region surrounded by thick field oxide and which is partly covered by an electrically isolating surface layer different from the field oxide. A base region within the active region is defined by a lithographically defined opening in the isolating layer. Also claimed are: (i) a process for manufacturing a transistor as above; (ii) a capacitor at the surface of a substrate comprising a dielectric layer over a highly doped buried region; (iii) a process of manufacturing the capacitor above; (iv) a process for producing a free area at a surface of a substrate which is limited by a nitride layer; (v) a side-string structure having conductive silicon contact a border of an active area; and (vi) an integrated circuit, bipolar device and process. |
